A study was made of the effects introduced by the implantation of a typical fission product (Cs) into SiC, and of its diffusion behaviour during heat treatment. The results indicated that implantation at room temperature introduced total disorder (amorphization) at about 0.25dpa. Subsequent heat treatments revealed that defect annealing initiated at about 600C and that SiC began to recover its crystalline structure at about 1300C. The implanted Cs atoms began to diffuse at between 1150 and 1300C.

Ion Implantation of Cs into Silicon Carbide - Damage Production and Diffusion Behaviour. A.Audren, A.Benyagoub, L.Thomé, F.Garrido: Nuclear Instruments and Methods in Physics Research B, 2007, 257[1-2], 227-30