The electromagnetic field of lasers and non-equilibrium doping conditions permitted the laser doping of SiC with increased dopant diffusivity. Here Cr, which acted as a double acceptor, was laser-doped into SiC wafers. A thermal model was used to determine the temperature distribution at various depths in the wafer and a diffusion model was presented which included the effects of Fickian diffusion, laser electromagnetic field and thermal stresses due to localized laser heating, on the mass flux of dopant atoms. The dopant diffusivity was calculated as a function of temperature at different depths of the wafer, based upon measured dopant concentration profiles. The maximum diffusivities achieved were 4.61 x 10−10cm2/s at 298K and 6.92 x 10−12cm2/s at 3046K for 6H-SiC and 4H-SiC, respectively. The maximum concentration was found to be 2.29 x 1019/cm3 for 6H-SiC, which was 2 orders of magnitude higher than the reported value (3 x 1017/cm3 solid solubility limit).Effect of Laser Field and Thermal Stress on Diffusion in Laser Doping of SiC. S.Bet, N.Quick, A.Kar: Acta Materialia, 2007, 55[20], 6816-24