Issues related to the production of radiation defects in various polytypes, with differing conductivity types and concentrations of charge carriers as a result of irradiation with high-energy particles (ranging from electrons to heavy Bi ions) were considered. The effect of irradiation with high-energy particles upon the optical and electrical characteristics of the devices based on SiC were also considered, including devices that operated as detectors of nuclear radiation. Systematic trends (common to other semiconductors and characteristic of SiC) in the radiation-defect formation in SiC were established. The high radiation resistance of SiC was verified; it was shown that this radiation resistance could be increased at increased energies of incident particles and at higher temperatures of operation.

The Effect of Irradiation on the Properties of SiC and Devices Based on this Compound. E.V.Kalinina: Semiconductors, 2007, 41[7], 745-83