A study was made of p+-n-n+ detector structures based upon CVD films with an uncompensated donor concentration of 2 x 1014/cm3. The p+-region was created by the implantation of Al ions. The detectors were preliminarily irradiated with 8MeV protons to a fluence of 3 x 1014/cm2 and then annealed (600C, 1h). In measurements performed at 20 to 150C, the forward-and reverse-bias modes were compared. It was shown that the annealing leads to a higher collection efficiency of carriers generated by nuclear radiation and to a decrease in the amount of charge accumulated by traps in the course of testing. Despite the positive effect of the annealing, a considerable amount of radiation defects remain, which was manifested, in particular, in the kinetics of the forward current.

Effect of Low-Temperature Annealing on Characteristics of SiC Detectors with Radiation-Induced Defects. A.M.Ivanov, N.B.Strokan, A.V.Sadokhin, A.A.Lebedev: Semiconductors, 2007, 41[8], 979-83