Under forward bias SiC p–i–n diodes exhibited an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, it was shown that Peierls barriers and electrical activities were strongly dependent upon the dislocation core structures. Furthermore, it was found that solitons or antiphase defects along the dislocation line could not explain alone the enhancement of the dislocation velocity. A new theoretical model was proposed which could explain the enhancement of the dislocation mobility under forward bias. This model could be applied to any semiconductor materials in order to predict the behaviour under electron–hole plasma injections.

Anomaly Enhancement of the Dislocation Velocity in SiC. G.Savini, G.Savini, A.Marocchi, I.Suarez-Martinez, G.Haffenden, M.I.Heggie, S.Öberg: Physica B, 2007, 401-402, 62-6