Formation of extended defects during 4H-SiC{00▪1} epitaxial growth was investigated by grazing incidence synchrotron reflection X-ray topography and KOH-defect selective etching analysis. Details of the defect topography contrast features were collated with the KOH etched features. Conversion of threading screw dislocations into a defect on the basal plane as well as a carrot defect was tracked by performing topography before and after epitaxial growth. Simultaneous nucleation of a threading screw dislocation and a defect on the basal plane during epitaxial growth were found. The polytype inclusions were confirmed to be transparent in the topography condition. Formation of threading dislocation clusters during epitaxial growth was also investigated.

Investigation of Defect Formation in 4H-SiC Epitaxial Growth by X-Ray Topography and Defect Selective Etching. H.Tsuchida, I.Kamata, M.Nagano: Journal of Crystal Growth, 2007, 306[2], 254-61