Void formation in Si-rich a-SiC:H films deposited with dc magnetron sputtering was studied by effusion measurements of H and of implanted rare gases and secondary ion mass spectrometry. Rare gas atoms were incorporated into the material by ion implantation. The results suggest a widening of the network openings with increasing alloy concentration. However, the void formation was mainly attributed not to an increase in C concentration but to an increase in H incorporation.

Hydrogen Induced Voids in Hydrogenated Amorphous Silicon Carbon (a-SiC:H): Results of Effusion and Diffusion Studies. R.Saleh, L.Munisa, W.Beyer: Applied Surface Science, 2007, 253[12], 5334-40