Deconvoluted coincidence Doppler broadening spectroscopy measurements were made of 300keV and 1.7MeV electron irradiated SiC. The lower energy irradiation produces only C vacancies while the higher energy produces both C and Si vacancies. This distinction was easily seen in the high (20 to 35mrad) momentum range where a clear atomic signal of Si was seen for the C vacancy. In addition to the higher momentum region the higher resolution of the deconvoluted coincidence Doppler broadening spectra revealed structural information relating to the crystal lattice. The autocorrelation function obtained for positrons trapped at C vacancies was found to show a stronger lattice signal indicative of a more extended positron wave function and a less strongly bound state. Conversely that positron trapped at the Si vacancy exhibited a more damped autocorrelation function characteristic of a more spatially confined positron state. Silicon and Carbon Vacancies in Silicon Carbide Studied by Coincidence Doppler Broadening Spectroscopy. J.D.Zhang, C.C.Cheng, C.C.Ling, C.D.Beling, S.Fung: Physica Status Solidi C, 2007, 4[10], 3676-9