Here, p-n diodes were fabricated from 3C-SiC films hetero-epitaxially grown onto on-axis, Si-face (00▪1) 4H-SiC mesa substrate arrays. Images taken by electroluminescence-based optical emission microscopy and electron channelling contrast imaging revealed immobile linear features aligned along <110> directions; defects were expected on these particular devices, as the 3C films were grown onto stepped 4H mesas. To explain the formation of these defects, a procedure was used in which surface energies were calculated for terraces on a stepped 4H, Si-face surface in order to investigate their comparative stability. Subsequently, energetic calculations were use to confirm the formation of, and determine the orientation of, 3C nuclei on the more stable 4H terraces and to evaluate the nature of the coalescence of nuclei from neighbouring terraces.

Possible Formation Mechanisms for Surface Defects Observed in Heteroepitaxially Grown 3C-SiC. K.M.Speer, P.G.Neudeck, M.A.Crimp, C.Burda, P.Pirouz: Physica Status Solidi A, 2007, 204[7], 2216-21