The recovery of structural defects after implantation with 60 to 400keV 111In+ and 89Sr+, to doses ranging from 1012 to 3 x 1013/cm2, was investigated by using emission channelling and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites, in heavily perturbed point-defect environments, after room-temperature implantation. No amorphization of the lattice was observed. The point defects could be partially removed by annealing (1473K, 600s to 0.5h). The lattice-site occupations of implanted 24Na+ in GaN and AlN, and of 8Li+ in AlN, were also determined. These atoms occupied mainly interstitial sites at room temperature. The diffusion of Li, and the occupation of substitutional sites, was observed for implantation temperatures above 700K. A lattice-site change was also observed for Na in AlN, but not in GaN, after annealing (1073K, 600s).

Ion Implanted Dopants in GaN and AlN - Lattice Sites, Annealing Behavior, and Defect Recovery C.Ronning, M.Dalmer, M.Uhrmacher, M.Restle, U.Vetter, L.Ziegeler, H.Hofsäss, T.Gehrke, K.Järrendahl, R.F.Davis, Isolde: Journal of Applied Physics, 2000, 87[5], 2149-57