The determination of H energy levels in semiconducting materials was important owing to the ability of H impurity to compensate dopant activity in some materials or to act as a dopant itself in others. Although direct observation of H levels was difficult owing to its high mobility and reactivity, data could be provided using the H analog muonium, formed by implantation of positive muons. Muonium studies of bulk Si1−xGex alloys, aimed at the extraction of H energy levels within this system were presented here. A simple band alignment model predicted the behavior of donor and acceptor muonium species across the alloy range. This model was compared with experimentally determined donor and acceptor levels extracted from the temperature dependence of muonium amplitudes.

Muonium Defect States and Ionization Energies in SiGe Alloys. P.J.C.King, R.L.Lichti, B.R.Carroll, Y.G.Celebi, K.H.Chow, I.Yonenaga: Physica B, 2007, 401-402, 617-20