The concentration of divacancies in Si1-xGex solid solutions irradiated with 5MeV electrons was studied as a function of the Ge content in the 0 < x < 0.10 interval. It was demonstrated that the probability of the primary radiation-induced defect formation in the alloys bombarded with high-energy electrons weakly depends on the Ge content in the indicated interval.

Dependence of the Divacancy Concentration on the Germanium Content in p-Si1−xGex (0 < x < 0.10) Alloys Irradiated with 5MeV Electrons. N.A.Matchanov: Technical Physics Letters, 2007, 33[12], 1000-3