A study was made of the effects of ion implantation upon dislocation motion in SiGe/Si heterostructures. Here, O and N were implanted into the SiGe layer with the same implantation energy and dose. It was observed that the mobility and activation energy of the dislocation motion in the implanted SiGe/Si heterostructure decreased and increased, respectively. This decrease in mobility and increase in activation energy were larger in the O-implanted samples than in the N-implanted samples. It was also observed that the recovery of this reduced mobility to its original value commenced at above 700C. It was supposed that this decrease in mobility and increase in activation energy of the dislocation motion were attributable to the generation of microdefects, which offer resistance to the gliding motion of a threading dislocation.

Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure. A.Hara, N.Tamura, T.Nakamura: Japanese Journal of Applied Physics, 2007, 46[6A], 3524-6