A new fabrication technique for p-type thin films was described which involved the He-Ne laser illumination of bilayer Cu/nCdS structures at room temperature. The n-type films were obtained by vacuum evaporation in a quasi-closed volume, and X-ray diffraction was used to examine the product. The band gap of the films was deduced from the optical transmission spectra. An energy dispersive X-ray spectroscopic analysis of the Cu concentration distributions in the films, as a result of laser-accelerated diffusion, indicated an effective Cu diffusion coefficient of 8 x 10-12cm2/s at 25C.

Formation of p-Type CdS Thin Films by Laser-Stimulated Copper Diffusion T.D.Dzhafarov, M.Altunbaş, A.I.Kopya, V.Novruzov, E.Bacaksiz: Journal of Physics D, 1999, 32[24], L125-8