The photoluminescence from defect-related states and Si nanoclusters was observed simultaneously in Si-rich nitride films. The weaker red-light emission of Si nanoclusters was obtained in the 1100C annealed films with 514.5nm excitation. Due to the quantum confinement effect, the photoluminescence peaks red-shift with the increase of the excess Si concentration. Excited by the 325nm line, strong photoluminescence from N and Si dangling bond centres was observed in either the as-deposited films or the 1100C annealed ones. The results demonstrated that the luminescence from defect-related states or Si nanoclusters was selected by the excitation energy.

Photoluminescence of Si-Rich Silicon Nitride - Defect-Related States and Silicon Nanoclusters. M.Wang, D.Li, Z.Yuan, D.Yang, D.Que: Applied Physics Letters, 2007, 90[13], 131903