Strain relaxation in low-mismatch ZnSe/GaAs heterostructures was studied by transmission electron microscopy. The early stages of plastic relaxation proceeds by activation of secondary ½<011>{133}slip systems, leaving an array of misfit dislocations aligned along <310> directions in the interface. Threading dislocations originate from randomly distributed, highly strained single-or multi-twinned regions in the ZnSe layer, that were probably due to growth accidents. The influence of cross slip on the propagation of threading dislocations was discussed.

Sources of Misfit Dislocations in ZnSe/GaAs (001) Heterostructures. S.Lavagne, C.Levade, G.Vanderschaeve: Physica Status Solidi C, 2007, 4[8], 3015-9