Pseudomorphic ZnSe layers on GaAs(001) were grown by molecular beam epitaxy under the light illumination with a photon energy of about 1.8eV. In the layers, isolated Shockley-type stacking faults on (111), bordering not on the ZnSe/GaAs interface but on the ZnSe surface, as well as the well-known stacking fault pairs, were formed. The sum of the stacking fault areas was small in comparison with the layers grown by molecular beam epitaxy without light illumination Control of the Stacking Fault Areas in Pseudomorphic ZnSe Layers by Photo-Molecular Beam Epitaxy. Y.Ohno, T.Taishi, I.Yonenaga, S.Ichikawa, R.Hiraic, S.Takeda: Physica B, 2007, 401-402, 650-3