Wafers were irradiated with 15MeV α-particles, at room temperature, to fluences ranging from 1010 to 1014/cm2. The Ga-vacancy introduction rate and Si-at-As site introduction rate were measured by means of low-temperature photoluminescence spectroscopy and were found to be equal to 2300 and 1500/cm, respectively. The theoretical introduction rate, as calculated by taking account only of primary interactions, was 1070/cm.

Photoluminescence Study of Gallium Arsenide Irradiated with 15MeV Alpha Particles L.Sellami, M.Aubin, C.Aktik, C.Carlone, A.Houdayer, P.Hinrichsen: IEEE Transactions on Nuclear Science, 1999, 46[6], 1603-6