It was recalled that variable-energy positron annihilation spectroscopy had found applications in structural and electronic analyses of thin films and near-surface layers, nanoporous materials, ion implantation, Si photonics, and vacancy engineering. Examples were presented of how useful insights into current problems in semiconductor physics and technology were obtained by using combinations of variable-energy positron annihilation spectroscopy and other techniques such as secondary ion mass spectrometry, transmission electron microscopy, electrical characterization, and optical techniques such as photoluminescence and optically-detected magnetic resonance.

Defect Profiles in Semiconductor Structures. P.G.Coleman: Physica Status Solidi C, 2007, 4[10], 3620-6