Vacancy engineering was proven to be a viable alternative to pre-amorphization and solid phase epitaxy for creating ultra-shallow junctions. An investigation was made here of the effect of implantation order – i.e. whether the dopant implant was preceded or followed by the vacancy generating co-implant – in terms of Rs and diffusion. It was found that for optimal efficiency the co-implant should be performed first. Ultra-shallow B layers created using this sequence could result in highly stable, ultra-shallow B layers which do not deactivate significantly during annealing (700C, 0.25h).

Vacancy Engineering for Ultra-Shallow Junction Formation. R.Gwilliam, N.E.B.Cowern, B.Colombeau, B.Sealy, A.J.Smith: Nuclear Instruments and Methods in Physics Research B, 2007, 261[1-2], 600-3