It was shown that statistical fluctuations in the distribution of impurity atoms adsorbed at dislocations lead to the existence of a dislocation-mobility threshold with a magnitude σth dependent on temperature and interaction between impurities. In the low-temperature region, σth could significantly exceed the pinning-stress magnitude σpin determined by the average concentration of adsorbed impurities. The results of the calculation could also be used when describing the kinetics of one-dimensional systems of another physical nature.

Threshold Stresses for Motion of Dislocations in Extrinsic Semiconductors. B.V.Petukhov: Semiconductors, 2007, 41[6], 625-30