Electron localization on dislocation kinks, essential for the multi-phonon capture of carriers by the dislocation, was discussed with regard to the problem of recombination-enhanced defect glide in wide-band semiconductors. In the case of a smooth kink (when the continuum model was applicable) the formation of bound electronic states was analyzed analytically. The eigenstates and corresponding wave functions were found, depending both on kink parameters and electronic characteristics of the semiconductor. A possible application of the obtained results for the analysis of electron localization on an abrupt kink was considered.

Bound Electronic States on a Dislocation Kink in Semiconductors. R.A.Vardanyan, A.A.Kteyan: Physica Status Solidi C, 4[8], 2903-7