Samples were implanted with 90keV Mg ions to doses of between 1014 and 5 x 1015/cm2 (ion current density between 0.5 and 20μA/cm2), at temperatures ranging from 25 to 550C, and were then rapidly thermally furnace-annealed at 1150C. The defect concentration was determined by means of Rutherford back-scattering spectroscopy and channelling. It was found that, at doses of up to 2.5 x 1015/cm2, the implantation-induced damage could be easily reduced by annealing. Variations in the ion current density had no effect upon defect generation. Implantation at higher temperatures revealed an anomalous behaviour, in that it resulted in an increase in damage.

Effect of Implantation-Parameters on the Structural Properties of Mg-Ion Implanted GaN. A.Wenzel, C.Liu, B.Rauschenbach: Materials Science and Engineering B, 1999, 59[1-3], 191-4