Radiation-induced point defects in Si-doped n-type samples were investigated by means of Hall-effect measurements and Raman spectroscopy. Correlated compensation effects, due to the simultaneous introduction of donor and acceptor centres, were observed in irradiated material. The defect production rate depended upon the dopant concentration. This implied that a model with all native defects immobile at room temperature was not true. The behaviour of radiation-induced defects upon heating was complicated, and exhibited 2 prominent stages of reverse annealing. The presence of radiation defects was still observable after annealing at up to 750C.

Point Defects in γ-Irradiated n-GaN V.V.Emtsev, V.Y.Davydov, V.V.Kozlovskii, V.V.Lundin, D.S.Poloskin, A.N.Smirnov, N.M.Shmidt, A.S.Usikov, J.Aderhold, H.Klausing, D.Mistele, T.Rotter, J.Stemmer, O.Semchinova, J.Graul: Semiconductor Science and Technology, 2000, 15[1], 73-8