Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivity gave an activation energy of 0.74eV for GCO/NGO and a conductivity which was very close to that of the bulk polycrystalline material. For GCO films deposited on LAO, the conductivity of the substrate makes a significant contribution to the total measured conductivity.

High Temperature Electrical Conductivity of Epitaxial Gd-Doped CeO2 Thin Films. L.Chen, C.L.Chen, D.X.Huang, Y.Lin, X.Chen, A.J.Jacobson: Solid State Ionics, 2004, 175[1-4], 103-6