Multiple quantum well laser structures with various p-doping profiles were investigated by using contactless electroreflectance and piezo-reflectance methods. The amount of p-dopant interdiffusion was deduced from Franz-Keldysh oscillations, and was found to agree with secondary ion mass spectrometry measurements.

Characterization of p-Dopant Interdiffusion in 1.3μm InGaAsP/InP Laser Structures using Modulation Spectroscopy A.Jaeger, W.D.Sun, F.H.Pollak, C.L.Reynolds, M.Geva: Journal of Applied Physics, 1999, 86[4], 2020-4