A deep level transient spectroscopic study was made of the effect of irradiation upon n-type C-free or C-rich Czochralski-type single crystals. It was shown that the generation of vacancy-related defects was significantly increased in C-rich samples as compared with C-free samples. Divacancy and multivacancy-related defects were especially increased in number. The observed behavior was related to the C in the bulk. The C-trapping of self-interstitials significantly increased the vacancy concentration and presumably led to the observed behaviour.

Carbon Influence on γ-Irradiation Induced Defects in n-Type Cz Si M.Vujicic, V.Borjanovic, B.Pivac: Materials Science and Engineering B, 2000, 71[1-3], 92-5