An 0.65μm-resolution X-ray beam, which was generated by using Fresnel zone-plate focussing optics, was used to study (001)-oriented samples which had been implanted with 10MeV Si ions at 300C. Diffuse scattering measurements were performed near to the (220) Bragg reflection, as a function of depth on a (110) cross-sectional sample. The intensities and lineshapes of the diffuse scattering were explained in terms of existing models of vacancy and interstitial clusters.

Use of X-Ray Micro-Beams for Cross-Section Depth Profiling of MeV Ion Implantation-Induced Defect Clusters in Si M.Yoon, B.C.Larson, J.Z.Tischler, T.E.Haynes, J.S.Chung, G.E.Ice, P.Zschack: Applied Physics Letters, 1999, 75[18], 2791-3