Electron paramagnetic resonance studies were made of the radiation defects which were produced, by 100keV protons, in thin (1μm) near-surface layers of crystals. Electron paramagnetic resonance spectra of excited triplet stales of O-plus-vacancy complexes, and spectra which were related to C-containing defects, formed at proton irradiation doses of 2 x 1012 to 1013/cm2. When the irradiation dose was increased from 1013 to 5 x 1013/cm2, a rapid decrease in the intensity of the electron paramagnetic resonance spectra occurred. This was attributed to H-passivation of the radiation defects.

Electron Paramagnetic Resonance of Radiation Defects in Hydrogen-Implanted Silicon Detected by Spin-Dependent Microwave Photoconductivity R.Laiho, L.S.Vlasenko, M.P.Vlasenko, V.A.Kozlov, V.V.Kozlovskii: Applied Physics Letters, 1999, 74[26], 3948-50