The diffusion of 64Cu was measured (table 88), by using a serial-sectioning technique, as a function of temperature (700 to 1153C) and O partial pressure (10-6 to 0.08atm). The O-partial-pressure and temperature dependences of DCu suggested that both neutral and singly-charged Cu vacancies contributed to cation self-diffusion. A defect model involving both neutral and singly-charged Cu vacancies, electron holes and singly-charged O-interstitial ions was developed and fitted to tracer-diffusion data. The defect data were quantitatively consistent with the Cu vacancy being 10 times more mobile than the O-interstitial ion at 1000C.

Diffusion and Point Defects in Cu2O. N.L.Peterson, C.L.Wiley: Journal of Physics and Chemistry of Solids, 1984, 45[3], 281-94