Thermal desorption spectra, under constant ramp-rate conditions, were determined following He implantation into bare Si. The spectra comprised 2 peaks. These were the α-peak, which was centered around 750 to 800C with a shoulder that extended down to 550C, and the β-peak which was centered around a lower temperature that depended upon the implantation-annealing conditions. The α-peak was attributed to emission from cavities, while the β-peak was attributed to emission from vacancy-like defects. A detailed theory was proposed which described He effusion from stable cavities; as controlled by the interatomic He-He potential. It was found to reproduce most of the α-peak accurately. The post-implantation of H into samples which exhibited pure β emission resulted in an α-peak which could be described by the above model; provided that the cavities were unstable and shrank during desorption in such a way as to maintain constant the concentration of contained He.

Thermal Desorption Spectra from Cavities in Helium-Implanted Silicon G.F.Cerofolini, G.Calzolari, F.Corni, S.Frabboni, C.Nobili, G.Ottaviani, R.Tonini: Physical Review B, 2000, 61[15], 10183-93

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