Dislocation loops and B-doped δ-layers were used to monitor interstitial injection during nitrous oxidation at 850 to 950C. The interstitials which were captured by the loops were monitored by using transmission electron microscopy. The number of Si atoms which was released after oxynitridation was deduced from the difference between the total number of atoms stored in the loops under oxidizing and inert ambients. It was found that this number was larger, when compared with the same dry-O oxidation conditions. However, the oxidation rate was lower during oxynitridation; when compared with dry oxidation. Analysis of earlier data indicated a higher supersaturation ratio of interstitials in the former case. This result was confirmed by measuring the diffusivity enhancement of B δ-layers during oxidation under both ambients.

Point Defect Injection during Nitrous Oxidation of Silicon at Low Temperatures D.Skarlatos, D.Tsoukalas, L.F.Giles, A.Claverie: Journal of Applied Physics, 2000, 87[3], 1103-9