Electrically active defects which were introduced by the formation of Ni-Pt monosilicides at 600 to 800C were studied in n-type samples by using deep level transient spectroscopy and transmission electron microscopy. A Ni-related electron trap level at Ec - 0.42eV was observed after silicidation at 600C or above, and a Pt-related electron trap level at Ec - 0.50eV was detected after silicidation at 700C or above. Hole trap levels at Ev + 0.22 and Ev + 0.28eV were also detected; the former for silicidation at 700C or above and the latter for 600C silicidation. In samples which were silicided at 600C, an additional electron trap level was located at Ec - 0.16eV. Its broad spectral peak was detected in the near-surface region (down to 0.65μm) of samples in which 5 to 10nm-long {311}-type defects were also observed. Most of the observed electrically active defects were found in near-surface regions (down to 2μm). The lowest total defect concentration was observed in samples which were silicided at 700C; where the lowest reverse saturation current was also observed. This indicated that the Ni(Pt) monosilicidation-induced electrically active defects were effective recombination/generation centres.

Nickel-Platinum Alloy Monosilicidation-Induced Defects in n-Type Silicon D.Z.Chi, D.Mangelinck, J.Y.Dai, S.K.Lahiri, K.L.Pey, C.S.Ho: Applied Physics Letters, 2000, 76[23], 3385-7