Thin films of a novel glassy conductor were prepared by subjecting LiNbO3 deposits to radio-frequency magnetron sputtering in a N-containing atmosphere. It was found that the films exhibited ionic conductivities which were 2 orders of magnitude higher than that of LiNbO3 films (with a room-temperature conductivity of about 5 x 10-7S/cm). It was noted that the film structure was highly cross-linked; leading to activation energies which were as low as 0.5eV (tables 132 and 133).

L.Q.Nguyen, V.V.Truong: Journal of Applied Physics, 1996, 80[5], 2914-7

Table 133

Ionic Conductivity of N-Doped LiNbO3

(deposited under a constant N partial pressure of 0.0008Torr)

 

PAr (Torr)

(S/cm)

E (eV)

4 x 10-4

4 x 10-8

0.52

5 x 10-4

5 x 10-8

0.53

6 x 10-4

1 x 10-7

0.50

7 x 10-4

1.5 x 10-7

0.53

8 x 10-4

2 x 10-7

0.48

9 x 10-4

5 x 10-7

0.51

1 x 10-3

3.6 x 10-7

0.50

1.1 x 10-3

1.8 x 10-7

0.52