Whiskers which had been grown using vapour-solid, 2-stage growth or vapour-liquid-solid methods in a carbothermal reduction system were investigated by using X-ray diffraction and transmission electron microscopy. The number of stacking faults in the whiskers increased with decreasing diameter. That is, 1μm-diameter whiskers grown using the above methods contained large numbers of stacking faults, whereas large-diameter (above 2μm) whiskers which were grown using the vapour-liquid-solid method contained few stacking faults. The frequent stacking faults in small-diameter whiskers were attributed to the high specific lateral surface area of small whiskers.

Stacking Faults in Silicon Carbide Whiskers H.J.Choi, J.G.Lee: Ceramics International, 2000, 26[1], 7-12