Diffusion data were presented for 27Al implanted (50keV, 1014/cm2) into SiO2 layers that had been thermally grown on Si and annealed at 300 to 1000C. The Al, exhibited negligible diffusion: < 5 x 10-18cm2/s at 500C. In general, the diffusivity in SiO2 was significantly lower than that in Si.

Diffusion of 18 Elements Implanted into Thermally Grown SiO2. H.G.Francois-Saint-Cyr, F.A.Stevie, J.M.McKinley, K.Elshot, L.Chow, K.A.Richardson: Journal of Applied Physics, 2003, 94[12], 7433-9