The diffusion behavior of host and other atoms in plasma-enhanced chemical vapor deposited layers was studied. The occurrence of As diffusion could be observed only in the case of semiconductor samples which had been etched in an H2SO4 solution before SiO2 deposition. An As-rich interface layer which was produced by this etchant was assumed to act as an exhausting source for mobile As-O complexes. The InGaAs host atoms could be detected, at concentrations of up to about 1018/cm3, in secondary-ion mass spectroscopic studies of SiO2 films after annealing. Their effective diffusion coefficients were estimated to be between 10-15 and 10-13cm2/s within the temperature range which was investigated. Activation energies of about 0.8eV were derived for As.

P.Ambrée, K.Wandel: Journal of Applied Physics, 1994, 76[2], 880-6