Rutherford 4He ion back-scattering studies were made of implanted Cl in a thermal oxide film on Si. The diffusion coefficient at various temperatures was deduced by using a simulation technique,and the results (table 165) could be described by:
D(cm2/s) = 1.0 x 10-12 exp[-0.5(eV)/kT]
A.S.Vengurlekar, K.V.Ramanathan, V.T.Karulkar, V.P.Salvi: Journal of the Electrochemical Society, 1985, 132[5], 1172-7
Table 165
Diffusion of Cl in SiO2
Temperature (K) | Diffusivity (cm2/s) |
600 | 1.93 x 10-15 |
850 | 5.72 x 10-15 |
1100 | 1.53 x 10-14 |