Diffusion data were presented for 69Ga implanted (180keV, 8.0 x 1013/cm2) into SiO2 layers that had been thermally grown on Si and annealed at 300 to 1000C. The Ga exhibited negligible diffusion:  < 6.0 x 10-18cm2/s at 1000C. In general, the diffusivity in SiO2 was significantly smaller than that in Si. Because Ga was used as a source for focused ion beam analyses, the lack of Ga diffusion in SiO2 was of interest.

Diffusion of 18 Elements Implanted into Thermally Grown SiO2. H.G.Francois-Saint-Cyr, F.A.Stevie, J.M.McKinley, K.Elshot, L.Chow, K.A.Richardson: Journal of Applied Physics, 2003, 94[12], 7433-9