The diffusion of P in films which were as thin as 3.5nm was studied by using doped poly-Si/SiO2/Si samples. The data for P diffusion could be described by:
D (cm2/s) = 0.012 exp[-4.1(eV)/kT]
It was found that a 2-boundary model could be used to characterize the P diffusion.
T.Matsuura, J.Murota, N.Mikoshiba, I.Kawashima, T.Sawai: Journal of the Electrochemical Society, 1991, 138[11], 3474-80
Table 169
Diffusion of Sb in SiO2
Temperature (C) | Ambient | D (cm2/s) |
1100 | O2/H2O | 6.60 x 10-16 |
1200 | O2/H2O | 2.42 x 10-15 |
1100 | O2 | 6.00 x 10-16 |
1200 | O2 | 1.29 x 10-15 |
1100 | N2 | 5.80 x 10-16 |
1200 | N2 | 1.19 x 10-15 |