Diffusion data were presented for 51V implanted (150keV, 1014/cm2) into SiO2 layers that

had been thermally grown on Si and annealed at 300 to 1000C. The V exhibited negligible diffusion: < 1.8 x 10-17cm2/s at 1000C. In general, the diffusivity in SiO2 was significantly smaller than that in Si.

Diffusion of 18 Elements Implanted into Thermally Grown SiO2. H.G.Francois-Saint-Cyr, F.A.Stevie, J.M.McKinley, K.Elshot, L.Chow, K.A.Richardson: Journal of Applied Physics, 2003, 94[12], 7433-9

Table 171

Diffusion of Ti in Synthetic Quartz

(parallel to the c-axis)

 

Temperature (C)

D (m2/s)

1200

2.33 x 10-18

1151

7.12 x 10-18

1150

2.01 x 10-18

1102

2.44 x 10-19

1101

3.24 x 10-18

1052

5.68 x 10-19

1051

1.28 x 10-18

1050

1.41 x 10-19

1000

1.59 x 10-19

999

4.78 x 10-19

952

9.79 x 10-20

950

9.38 x 10-21

903

2.40 x 10-20

901

2.26 x 10-20

900

6.28 x 10-21

852

1.13 x 10-20

850

1.12 x 10-20

848

2.50 x 10-21

803

5.48 x 10-22

801

3.61 x 10-21

750

8.23 x 10-22

700

4.72 x 10-22

648

8.98 x 10-23

Table 172

Diffusion of Ti in Synthetic Quartz

(normal to the c-axis)

 

Temperature (C)

D (m2/s)

1101

7.12 x 10-19

1051

1.92 x 10-19

999

2.28 x 10-19

903

1.43 x 10-20

850

2.21 x 10-21

801

2.48 x 10-21

750

1.83 x 10-21