The effect of a real crystal structure upon the mobility of dislocations moving in a crystalline field was simulated by introducing a random distribution of internal stresses. The allowance made for a statistical scatter in the kinetic characteristics of elementary dislocation motion dictated the use of a probabilistic description instead of a conventional theory based upon the Peierls mechanism. In addition to the modes which were observed in an ideal crystal, new modes of dislocation motion in a real crystal were considered and classified for wide ranges of temperature and stress. The results which were obtained permitted a qualitative interpretation to be made of dislocation mobility under various loads.

Modified Peierls Mechanism of Dislocation Motion in a Random Field of Internal Micro-Stresses. B.V.Petukhov: Kristallografiya, 1997, 42[2], 197-205 (Crystallography Reports, 1997, 42[2], 161-8)