The electromigration of Cu interconnections was investigated in order to solve Huntington’s equation by numerical analysis. The Cu atoms moved towards the anode from the cathode and accumulated at the anode-end. This result was in good agreement with results previously derived by theoretical analysis. The accumulation rate of Cu atoms increased with increasing current density, but was not so highly influenced by temperature. The characteristics of the rate of electromigration exhibited a linear dependence upon current density and an exponential dependence upon temperature. This result agreed with Black’s experimentally derived equation. This proved that numerical analysis of the atomic transport equation permitted the prediction of electromigration failure-time.

Numerical Analysis for Electromigration of Cu Atom. T.Nemoto, T.Murakawa, A.T.Yokobori: Materials Transactions, 2007, 48[9], 2513-7