The growth of He clusters in Ti crystals was simulated in great detail by using molecular dynamics. It was observed that, as the He cluster grew, defects around the cluster were formed and the local pressure increased. However, at a certain point in the growth process, the defects were found to escape rapidly as a whole from the He cluster, accompanied by relief of local the high pressure and recovery of the Ti crystal structure around the He cluster.

Defect Behavior Induced by Helium Cluster Growth in Titanium Crystals. J.Wang, Q.Hou, T.Sun, X.Long, X.Wu, S.Luo: Journal of Applied Physics, 2007, 102[9], 093510