The T diffusion in V-4Cr-4Ti was investigated at 230 to 573K (figure 5). The T was loaded into the surface layers of the alloy specimen by alternating-current glow discharge. Before and after diffusion annealing, T diffusion profiles were measured by using an imaging-plate technique. The T-diffusion coefficients, DT, which were found by fitting a numerical solution to the diffusion profiles, were a little smaller than those for pure V, with an activation energy of 0.13eV. Below 320K, the Arrhenius plot of DT bent downwards; indicating the larger activation energy of 0.19eV. This was probably due to the trapping effect of both of Cr and Ti.

Diffusion and Trapping of Tritium in Vanadium Alloys. J.Masuda, K.Hashizume, T.Otsuka, T.Tanabe, Y.Hatano, Y.Nakamura, T.Nagasaka, T.Muroga: Journal of Nuclear Materials, 2007, 363-365, 1256-60