The retention of D in implantation-induced defects in polycrystalline W was studied. The D was implanted using various energies, and the concentrations of retained D were analyzed using secondary-ion mass spectrometry and nuclear-reaction analysis. Annealing was carried out at 4 pre-determined temperatures which corresponded to 4 different defect-types that could trap D. Quantitative estimates were obtained of the numbers of each defect-type which were produced by 5, 15 or 30keV D-implantation to a dose of 5.8 x 1016/cm2.

Deuterium Irradiation-Induced Defect Concentrations in Tungsten. K.Heinola, T.Ahlgren, E.Vainonen-Ahlgren, J.Likonen, J.Keinonen: Physica Scripta, 2007, T128, 91-5