The growth of diamond-like C films was studied using molecular dynamics simulations. The effect of impact angle on film structure was carefully studied, which shows that the transverse migration of the incident atoms was the main channel of film relaxation. A transverse-migration-induced film relaxation model was presented to elucidate the process of film relaxation which advances the original model of sub-plantation. The process of diamond-like C film growth on a rough surface was also investigated, as well as the evolution of microstructure and surface morphology of the film. A preferential-to-homogeneous growth mode and a smoothing of the film were observed, which were due to the transverse migration of the incident atoms.

Role of Atomic Transverse Migration in Growth of Diamond-Like Carbon Films. T.B.Ma, Y.Z.Hu, W.Hui: Chinese Physics, 2007, 16[9], 2798-802