Optical spectroscopy and volume “swelling” measurements were used to study radiation damage and graphitization of diamonds implanted with He ions at 77 to 373K. It was established that the radiation damage decreased as the implantation temperature increased. This effect was explained by radiation-stimulated annealing of defects caused by damaging. It was shown that the result of formation of a graphitized layer was determined not by the implantation dose but by the level of radiation damage. It was found that the lower the implantation temperature, the lower the annealing temperatures required for the formation of a graphitized layer. It was shown that annealing of radiation defects and the formation of a graphitized layer in a diamond occur up to 1600C.

Radiation Damage in Diamonds Subjected to Helium Implantation. A.V.Khomich, R.A.Khmelnitskiy, V.A.Dravin, A.A.Gippius, E.V.Zavedeev, I.I.Vlasov: Physics of the Solid State, 2007, 49[9], 1661-5