Transmission electron microscopy was applied to study the diamond film grown in a CH4 and H2 gaseous mixture by microwave plasma assisted chemical vapour deposition. Defects in the nanometre scale, dislocation loops, were first observed in diamond films. The dislocation loops were found to be of co-existence with planar defects and were next to the planar defects for {111} faceting grains. A possible mechanism was suggested to interpret the co-existence of dislocation loops with planar defects.

Vacancy Aggregation in Diamond Films Grown in CH4+H2 Atmosphere by MPCVD. Y.Y.Liu, Q.Y.Zhang, E.Bauer-Grosse: Chinese Physics Letters, 2007, 24[12], 3502-5