It was noted that, under forward bias, SiC p–i–n diodes exhibited an anomaly enhancement of the partial dislocation mobility. Via first-principles calculations, it was shown that Peierls barriers and electrical activities were strongly dependent upon the dislocation core structures. It was further found that solitons or antiphase defects along the dislocation line could not alone explain the enhancement of the dislocation velocity. A new theoretical model was proposed that could explain the enhancement of the dislocation mobility under forward bias. This model could be applied to any semiconductor material in order to predict the behaviour under electron–hole plasma injection.

Anomaly Enhancement of the Dislocation Velocity in SiC. G.Savini, G.Savini, A.Marocchi, I.Suarez-Martinez, G.Haffenden, M.I.Heggie, S.Öberg: Physica B, 2007, 401-402, 62-6